Analysis and Simulation of Heterostructure DevicesSpringer Science & Business Media, 2004 - 289 Seiten Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbitfs for long-range communication and thus cover a broad range of appli cations. To cope with explosive development costs and the competition of today's semicon ductor industry, Technology Computer-Aided Design (TCAD) methodologies are used extensively in development and production. As of 2003, III-V semiconductor HEMT and HBT micrometer and millimeter-wave integrated circuits (MICs and MMICs) are available on six-inch GaAs wafers. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. Simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with respect to industrial applications. In particular, a detailed discussion of physical modeling for a great variety of materials is presented. |
Inhalt
Introduction | 1 |
Physical Models | 26 |
RF Parameter Extraction for HEMTs and HBTS | 141 |
Heterojunction Bipolar Transistors | 154 |
High Electron Mobility Transistors | 204 |
Novel Devices | 236 |
243 | |
274 | |
List of Tables | 288 |
Andere Ausgaben - Alle anzeigen
Analysis and Simulation of Heterostructure Devices Vassil Palankovski,Rüdiger Quay Eingeschränkte Leseprobe - 2012 |
Analysis and Simulation of Heterostructure Devices Vassil Palankovski,Rüdiger Quay Keine Leseprobe verfügbar - 2012 |
Analysis and Simulation of Heterostructure Devices Vassil Palankovski,Rudiger Quay Keine Leseprobe verfügbar - 2003 |
Häufige Begriffe und Wortgruppen
AlGaAs AlGaAs/GaAs AlGaN AlGaN/GaN HEMTs alloy materials AlSb Appl band bandgap energy Bandgap narrowing base bowing parameter capacitance channel cm²/Vs collector Comparison cut-off frequency density device simulation DHBT doping effects Electron Devices electron mobility electrons and holes emitter energy relaxation equation experimental data extracted Forward Gummel plots function of material GaAs GaAsSb GaSb gate length HEMT Heterojunction Bipolar Transistors heterostructure high-field hydrodynamic IEDM Tech IEEE IEEE Trans impact ionization Impurity concentration InAlAs InAlAs/InGaAs HEMTs InAs InGaAs InGaP InSb interface Intl kB TL lattice temperature layer ledge Lett Material composition dependence MC data mobility model model parameters MOSFET ohmic ohmic contact optimization Parameter values PHEMT Phys Proc recombination S-parameters saturation velocity Selberherr self-heating SiGe HBTs silicon Simulated and measured Solid-State Electron substrate surface charges Table Technology temperature dependence thermal conductivity tunneling valence band