Properties of Aluminium Gallium ArsenideSadao Adachi IET, 1993 - 325 Seiten The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering. |
Inhalt
MECHANICAL ELASTIC AND LATTICE VIBRATIONAL PROPERTIES | 15 |
2 | 22 |
4 | 30 |
2 | 87 |
CARRIER TRANSPORT PROPERTIES | 151 |
5 | 193 |
197 | 214 |
Minoritycarrier lifetime and diffusion length in AlGaAs | 221 |
9 | 227 |
3 | 275 |
4 | 289 |
5 | 303 |
317 | |
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absorption coefficient acceptor AlGaAs alloys AlGaAs/GaAs alloy composition aluminium aluminium gallium arsenide Appl atoms band gap binding energy calculated carrier concentration cm³ conduction band Conf Cryst decrease defect density devices dielectric dislocations donor doped DX centres effective mass elastic constants electric field electron mobility EMIS Datareviews Series emission epitaxy exciton experimental data FIGURE function Ga₁ Ga₁.,As GaAs GaAs/AlGaAs Gallium Arsenide grown Growth Netherlands growth temperature heterojunction heterostructures hole mobility hydrogen III-V impurities increases indirect gap interface Japan lattice parameters layers Lett material measured MOCVD molecular beam epitaxy MOVPE observed obtained optical phonon oxide p-type phonon photoluminescence Phys plasma pressure quantum Raman range recombination refractive index region reported reststrahlen room temperature S.Adachi samples scattering Semicond semiconductors Solid State Commun spectra structure studied superlattice surface TABLE technique Technol temperature dependence thermal transition undoped valence band values velocity