Introduction to DislocationsButterworth-Heinemann, 02.07.2001 - 242 Seiten Introduction to Dislocations was first published in 1965 in a series aimed at undergraduate and postgraduate students in metallurgy and materials science and related disciplines. At the time, the subject was maturing and it was expected that 'dislocation concepts' would remain a core discipline for a very long time. As expected, the book has been, and remains, an important undergraduate text all over the world. A wider range of materials has emerged since 1965, most notably in the field of electronics and micro-engineering. The principles of dislocation theory still apply but some of the detail requires further treatment. This fourth edition provides an essential basis for an understanding of many of the physical and mechanical properties of crystalline solids. This new edition has been extensively revised and updated to reflect developments in the understanding of the subject, whilst retaining the clarity and comprehensibility of the previous editions. |
Inhalt
| 22 | |
Chapter 3 Movement of Dislocations | 42 |
Chapter 4 Elastic Properties of Dislocations | 62 |
Chapter 5 Dislocations in Facecentred Cubic Metals | 82 |
Chapter 6 Dislocations in Other Crystal Structures | 102 |
Chapter 7 Jogs and the Intersection of Dislocations | 128 |
Chapter 8 Origin and Multiplication of Dislocations | 145 |
Chapter 9 Dislocation Arrays and Crystal Boundaries | 157 |
Chapter 10 Strength of Crystalline Solids | 193 |
The SI System of Units | 237 |
| 239 | |
Häufige Begriffe und Wortgruppen
alloys angle applied stress atoms basal Burgers circuit Burgers vector climb close-packed components core cross slip crystal structure curve diffraction direction dislocation density dislocation line dislocation loops dislocation moves displacement dissociated edge dislocation equilibrium example extra half-plane face-centred cubic face-centred cubic metals Figure flow stress force formation Frank partial glide plane grain boundaries hexagonal illustrated in Fig increase interaction interface intersection interstitial jogs Kmax lattice layer line sense material mechanism Nabarro nucleation obstacles occurs opposite sign orientation parallel partial dislocations perfect dislocation perpendicular plastic deformation point defects positions precipitates prismatic loops produced radius region resolved shear stress screw dislocation segments shear stress Shockley partial shown in Fig silicon single crystal slip plane solute spacing specimen stacking fault stacking fault energy stacking sequence stacking-fault strain rate stress field surface temperature tetrahedron thermal tilt boundary tion transmission electron microscopy twinning unit cell unit length vacancies
Beliebte Passagen
Seite 20 - Properties of Materials at High Rates of Strain, Inst. Mech. Eng., London, 1957...
Seite 21 - SUTTON, AP, and BALLUFFI, RW, 1995, Interfaces in Crystalline Materials (Oxford University Press).
Seite 5 - AI face-centred cubic structure atoms are situated at the corners of the unit cell and at the centres of the cell faces (fig. 3a). Each atom has twelve equidistant nearest neighbours situated at a distance of a/|/2 ( = 0.707a) where a is the side of the unit cell.
Verweise auf dieses Buch
Fundamentals of Creep in Metals and Alloys Michael E. Kassner,Maria-Teresa Perez-Prado Eingeschränkte Leseprobe - 2004 |